| PART |
Description |
Maker |
| SUD06N10-225L |
N-Channel 100-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FET 6-PIN 2 CIRCUITS
MOS Field Effect Transistor
From old datasheet system
|
NEC Corp.
|
| UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| SUM110N06-3M4L |
N-Channel 60-V (D-S) 175C MOSFET N通道60 - V（下局副局长）175C MOSFET
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SUM16N20-125 |
N-Channel 200-V (D-S) 175C MOSFET N沟道200 -五（副）175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| 2SK1337 2SK1337TZ-E |
300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
Silicon N Channel MOS FET
|
Renesas Electronics Corporation
|
| APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5010JVRU3 |
POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT1001RSVR APT1001RSVRG |
100% Avalanche Tested
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
